مقاله PREPARATION OF SN1درXPBXS THIN FILMS FOR OPTOELECTRONIC AP
مقاله PREPARATION OF SN1درXPBXS THIN FILMS FOR OPTOELECTRONIC APPLICATION فایل ورد (word) دارای 7 صفحه می باشد و دارای تنظیمات در microsoft word می باشد و آماده پرینت یا چاپ است
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بخشی از متن مقاله PREPARATION OF SN1درXPBXS THIN FILMS FOR OPTOELECTRONIC APPLICATION فایل ورد (word) :
سال انتشار: 1393
محل انتشار: اولین کنفرانس و نمایشگاه بین المللی انرژی خورشیدی
تعداد صفحات: 7
نویسنده(ها):
v.f gremenok – Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus, P. Brovki str. 19, 220072 Minsk, Republic of Belarus
v.a ivanov – Scientific-Practical Materials Research Centre NAS of Belarus, Minsk, Belarus
h izadneshan – Scientific-Practical Materials Research Centre NAS of Belarus, Minsk, Belarus Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
a bakouie – Tarbiat Modares University, Teheran, Iran
چکیده:
Thin films and nanorods of Sn1–XPbXS with orthorhombic crystal structure and c-axis oriented perpendicular to the substrate surface were grown by hot wall vacuum deposition (HWVD) method. The nanorods grew via a selfconsuming vapor–liquid–solid (VLS) mechanism by means of Sn-droplets onto the surface of an underlying thin film. The former one consists of stacked blocks with their c-axis always parallel to the growth direction. However, each block is alternately rotated around the [001] against its underlying and following one. As revealed by composition analysis there is no composition gradient across or within the nanorods and the underlying film. The rods were about 510-7 m high, 310-7 m in diameter. The droplet at the top of rods consists of Sn with small trace of Pb and S. The density of rods arranged like a lawn depends on the metal ratio and substrate temperature. The as-grown Sn1-XPbXS samples showed p-type electrical conductivity. The increase of lead atoms concentration leads to decrease of Seebeck coefficient and decrease of conductivity.
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